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Towards the First Silicon Laser by Lorenzo Pavesi & S.V. Gaponenko & Luca Dal Negro
Proceedings of the NATO Advanced Research Workshop, Held in Trento, Italy, 21-26 September 2002
Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book. |
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| Author(s) : | Format : Hardback Book |
| ISBN-10 : 1402011938 | ISBN-13 : 9781402011931 |
| RRP : £124.00 | Best available price : £ / $ |
| Prices as of : BST check live prices | |
Product Details:
Series Title : NATO Science Series II: Mathematics, Physics & Chemistry
Country Publication : Netherlands
Publication Date : 01/03/2003
Publisher : Kluwer Academic Publishers Group
Page Length : 500mm
Page Size : 234mm